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| MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 160 A = 1200 V VCES VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 6.8 W, non repetitive VGE = 15 V, TJ = 125C, RG = 6.8 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 1200 1200 20 30 160 110 220 10 ICM = 200 VCEK < VCES 700 150 -40 ... +150 V V V V A A A ms A Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W q C C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 12.7 9.6 50 130 4.6 Typical Applications q q Md q q AC and DC motor control AC servo and robot drives power supplies welding inverters dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Data according to a single IGBT/FRED unless otherwise stated. (c) 2000 IXYS All rights reserved 1-4 030 MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 9 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS VGE = 0 V IC = 4 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 100 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 6 mA mA 400 nA 2.2 6.5 1 0.5 100 60 600 90 16 15 0.36 2.7 V nF nF nF ns ns ns ns mJ mJ Inductive load, TJ = 125C IC = 100 A, VGE = 15 V VCE = 600 V, RG = 6.8 W with heatsink compound 0.18 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.4 1.9 2.6 2.0 150 95 62 200 0.9 V V A A A ns 0.45 K/W K/W Conduction VF IF IRM trr RthJC RthJS IF = 100 A, VGE = 0 V, IF = 100 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms TJ = 125C, VR = 600 V with heatsink compound IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.3 V; R0 = 12.0 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 6.5 mW Thermal Response IGBT (typ.) Cth1 = 0.25 J/K; Rth1 = 0.175 K/W Cth2 = 0.58 J/K; Rth2 = 0.004 K/W Free Wheeling Diode (typ.) Cth1 = 0.14 J/K; Rth1 = 0.443 K/W Cth2 = 0.26 J/K; Rth2 = 0.009 K/W (c) 2000 IXYS All rights reserved 2-4 MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 250 A 250 TJ = 25C VGE=17V 15V 13V 11V A 200 IC 150 100 TJ = 125C VGE=17V 15V 13V 11V 200 IC 150 100 50 0 0.0 9V 9V 50 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 250 A VCE = 20V TJ = 25C 300 TJ = 125C 200 IC A 250 TJ = 25C IF 200 150 150 100 100 50 0 5 6 7 8 9 10 VGE 50 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 20 V VGE 300 ns trr VCE = 600V IC = 100A A IRM 15 trr 80 10 40 5 TJ = 125C VR = 600V IF = 100A 200 IRM 100 145-12 0 0 100 200 300 400 QG 0 500 nC 0 200 400 600 -di/dt 0 800 A/ms 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 40 mJ Eon td(on) 120 ns 90 tr 60 t 40 mJ Eoff 30 td(off) Eoff 800 ns 600 t 400 30 Eon 20 VCE = 600V VGE = 15V 20 VCE = 600V VGE = 15V 10 RG = 6.8W 30 TJ = 125C 10 RG = 6.8W 200 TJ = 125C tf 0 0 50 100 150 IC 200 A 0 0 0 50 100 150 IC 200 A 0 Fig. 7 Typ. turn on energy and switching times versus collector current 50 mJ 300 ns 240 t 180 120 60 0 56 Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 25 mJ 1500 ns 1200 t 900 600 300 tf 0 40 Eon VCE = 600V VGE = 15V IC = 100A TJ = 125C Eon td(on) tr 20 15 10 5 0 0 VCE = 600V VGE = 15V IC = 100A TJ = 125C td(off) Eoff 30 20 10 0 0 8 16 24 32 RG 40 48 W 8 16 24 32 RG 40 48 W 56 Fig. 9 Typ. turn on energy and switching times versus gate resistor 240 A 200 ICM 1 K/W 0.1 ZthJC RG = 6.8W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 160 120 80 40 0 0 200 400 600 800 1000 1200 V VCE diode 0.01 0.001 0.0001 IGBT single pulse 145-12 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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